Co-doping: an effective strategy for achieving stable p-type ZnO thin films
Co-doping: an effective strategy for achieving stable p-type ZnO thin films
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DOI：
10.1016/j.nanoen.2018.08.001
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发表时间：
2018-10
期刊：
影响因子：
17.6
通讯作者：
Z. Ye;Haiping He;Li Jiang
中科院分区：
文献类型：
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作者：
Z. Ye;Haiping He;Li Jiang
ZnO是一种重要的功能材料，具有宽的直接带隙、大的激子结合能和易于生长的高质量纳米结构，在各种光电子领域，特别是在发光二极管、压电电子和纳米电子领域具有广阔的应用前景。然而，ZnO存在掺杂不对称问题，p型掺杂不稳定，这是其在光电子领域应用的主要障碍。共掺杂被定义为掺杂受体与其他杂质同时掺杂，并试图通过提高受体掺杂剂的溶解度和降低其电离能来解决p型掺杂问题。在过去的二十年里，大量的研究表明共掺杂对提高ZnO的p型电导率有积极的作用。主要在ZnO薄膜和纳米线方面取得了成功。本文综述了用共掺杂方法生长p型ZnO纳米晶薄膜的实验进展，主要分为受体-供体共掺杂、双受体共掺杂、受体-氢共掺杂和受体-等价共掺杂。此外，还对共掺杂p型ZnO纳米线的研究进展进行了综述。最后，讨论了p型ZnO共掺杂存在的问题。
ZnO is one of the most important functional materials with a wide direct band gap, large exciton binding energy, and facile growth of high quality nanostructures, which make it very promising for various optoelectronic applications, especially in light-emitting diodes, piezotronics and nanoelectronics. However, ZnO suffers from the doping asymmetry problem, and p-type doping is not stable, which is major hurdle for its application in optoelectronics. Co-doping, which is defined as doping acceptor with other impurities simultaneously, was proposed and attempted to address the p-type doping problem by enhancing the solubility and reducing the ionization energy of acceptor dopants. During the past two decades, extensive studies on co-doping have shown positive effects on improving the p-type conductivity of ZnO. The success was made mainly in ZnO films and nanowires. In this article, we provide an overview of the experimental efforts for growing p-type ZnO nanocrystalline films by the co-doping method, which are mainly classified as acceptor-donor co-doping, dual-acceptor co-doping, acceptor-hydrogen co-doping, and acceptor-isovalence co-doping. In addition, a few works on co-doped p-type ZnO nanowires are also summarized. Finally, we discuss the remaining problems of p-type ZnO by co-doping.