Electrical Resistivity of Titanium Diboride and Zirconium Diboride
Electrical Resistivity of Titanium Diboride and Zirconium Diboride
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DOI:
10.1111/j.1151-2916.1995.tb08498.x
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发表时间:
1995-05
影响因子:
3.9
通讯作者:
Matiur Rahman;Ching C. Wang;Weihua Chen;Sheikh A. Akbar;C. Mroz
中科院分区:
文献类型:
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作者:
Matiur Rahman;Ching C. Wang;Weihua Chen;Sheikh A. Akbar;C. Mroz
The electrical resistivities of hot-pressed samples of Ti{sub 1{minus}x}Zr{sub x}B{sub 2} (x = 0.0, 0.3, 0.5, 0.7, 1.0) were measured by a four-point ac technique over the range 298 to 1,573 K in an argon atmosphere. The hot-pressed samples for the intermediate compositions were found to be mixtures of two solid-solution phases. The resistivities for all compositions were found to increase linearly with temperature and can be described by {rho}(T) = {rho}{sub 298} + {phi}(T {minus} 298). The room-temperature resistivity {rho}{sub 298} ({mu}{Omega} {center_dot} cm) and the temperature coefficient of resistivity {phi} (n{Omega} {center_dot} cm/K) for ZrB{sub 2} were determined to be 7.8 and 10, both of which increase with the content of TiB{sub 2}. These values for TiB{sub 2} were determined to be 20.4 and 36, respectively.