Distance control of electromigration-induced silver nanogaps
Distance control of electromigration-induced silver nanogaps
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电迁移引起的银纳米间隙的距离控制
DOI：
10.1166/jnn.2014.8502
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
Hideki Masuda and Tokushi Kizuka
中科院分区：
文献类型：
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作者：
Y.Takahashi;Y.Nishino;R.Tsutsumi;H.Kubo;N.Zettsu;K.Yamauchi;T.Ishikawa;E.Matsubara;西野吉則;西野吉則;西野吉則;西野吉則;Yoshinori Nishino;Hideki Masuda and Tokushi Kizuka
在原子尺度上原位观察到银纳米接触（NC）中的电迁移（EM），同时测量电导和机械应力。原位观察表明，EM的临界偏压为45 mV。当偏置电压增加到100-200 mV时，NC破裂，并且对于宽度小于6 nm的NC获得距离为1.3±0.8 nm的间隙。当偏置电压进一步增加到200-300 mV时，间隙扩展到超过3 nm，而与NC宽度无关。研究发现，通过适当选择偏压和NC宽度，可以控制纳米间隙距离以适应特定的分子尺寸。
Electromigration (EM) in Ag nanocontacts (NCs) was observed in situ on an atomic scale using simultaneous measurements of electrical conductance and mechanical stress. The in situ observations showed that the critical bias voltage of EM was 45 mV. As the bias voltage was increased to 100–200 mV, the NCs broke and gaps with distances of 1.3±0.8 nm were obtained for NCs having widths smaller than 6 nm. When the bias voltage was further increased to 200–300 mV, the gaps expanded to more than 3 nm, regardless of the NC width. It was found that the nanogap distance could be controlled to fit specific molecular sizes by appropriately selecting the bias voltage and NC width.