GaN SYNTHESIS BY AMMONOTHERMAL METHOD
GaN SYNTHESIS BY AMMONOTHERMAL METHOD
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氨热法合成 GaN
DOI：
10.12693/aphyspola.88.833
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发表时间：
1995
影响因子：
0.7
通讯作者：
H. Jacobs
中科院分区：
文献类型：
--
作者：
R. Dwiliński;A. Wysmołek;J. Baranowski;M. Kamińska;R. Doradziński;J. Garczyński;L. Sierzputowski;H. Jacobs
结果表明，氨法可以在高压、中温条件下成功地合成出结晶质量良好的GaN粉体。所得GaN粉末颗粒尺寸为几微米。通过X射线摇摆曲线、扫描电镜和发光测试，发现随着矿化剂摩尔比的增加，粉末的结晶质量得到改善。因此，可以得出结论，氨溶液中高摩尔比例的矿化剂在多晶生长过程中起着至关重要的作用。发现GaN粉末具有高效率的可见光发射，PACS数：81.10.Dn
It is shown that ammonothermal method can be successfully used to synthesize GaN powder of good crystallographic quality from ammonia solution at high pressure and a moderate temperature. The size of obtained GaN powder grains was of a few micrometers. The improvement of the powder crystalline quality (examined by X-ray rocking curve, scanning electroii microscopy and luminescence measurements) with increasing molar proportion of mineralizer was observed. It was therefore possible to conclude that high molar proportion of mineralizer in ammonia solution plays a crucial role in the polycrystal growth process. Visible luminescence of high efficiency from the GaN powder was found. PACS numbers: 81.10.Dn