Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
复制标题
DOI：
10.1038/nphoton.2015.23
复制
发表时间：
2015-04-01
期刊：
影响因子：
35
通讯作者：
Li, Mo
中科院分区：
文献类型：
--
作者：
Youngblood, Nathan;Chen, Che;Li, Mo
层状二维材料具有新颖的光电特性，非常适合于平面光子电路的集成。例如，石墨烯已被用于宽带光电探测。然而，由于石墨烯缺乏带隙，石墨烯光电探测器遭受非常高的暗电流。相比之下，层状黑磷是二维材料家族的最新成员，由于其窄但有限的带隙，它是光电探测器应用的理想选择。在这里，我们展示了一个门控多层黑磷光电探测器集成在硅光子波导工作在近红外电信波段。与石墨烯器件相比，黑磷光电探测器具有显著的优势，可以在偏压下以非常低的暗电流工作，并在室温下在11.5 nm和100 nm厚的器件中分别获得高达135 mAW（-1）和657 mAW（-1）的固有响应度。光电流主要由光伏效应控制，具有超过3 GHz的高响应带宽。
Layered two-dimensional materials have demonstrated novel optoelectronic properties and are well suited for integration in planar photonic circuits. Graphene, for example, has been utilized for wideband photodetection. However, because graphene lacks a bandgap, graphene photodetectors suffer from very high dark current. In contrast, layered black phosphorous, the latest addition to the family of two-dimensional materials, is ideal for photodetector applications due to its narrow but finite bandgap. Here, we demonstrate a gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the near-infrared telecom band. In a significant advantage over graphene devices, black phosphorus photodetectors can operate under bias with very low dark current and attain an intrinsic responsivity up to 135 mAW(-1) and 657 mAW(-1) in 11.5-nm- and 100-nm-thick devices, respectively, at room temperature. The photocurrent is dominated by the photovoltaic effect with a high response bandwidth exceeding 3 GHz.