Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser
Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser
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通过操作和调制晶体管激光器的第一激发态来增强光学带宽
DOI：
10.1063/1.2805014
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发表时间：
2007
影响因子：
4
通讯作者：
N. Holonyak
中科院分区：
文献类型：
--
作者：
H. Then;M. Feng;N. Holonyak
建立了一个模型来解释晶体管激光器(TL)在第一激发态(λ=980 nm)比基态(1000 Nm)的高速性能有很大提高。模型表明，当工作从地面状态转移到第一激发态时，TL(无共振峰)的带宽增加了一倍之多。由于零电荷密度集电体(集电极电流IC≠0)处的晶体管边界条件导致发射极到集电极的布居分布“倾斜”，因此在与上子带中没有电荷“堆积”的计算一致的计算中，不需要假设上子带状态填充。
A model is developed to explain the large increase in the high-speed performance of the transistor laser (TL) operating on the first excited state (λ=980nm) compared to ground state (1000nm). The model shows that the bandwidth of the TL (absent resonance peaks) increases as much as twofold when it shifts operation from ground to first excited state. No assumption of upper subband state filling is necessary in the calculation consistent with no “pileup” of charge in the upper subbands because of the transistor boundary condition at the electrical collector of zero charge density (collector current IC≠0) resulting in a “tilted” emitter-to-collector population distribution.