Effect of Atomic Oxygen and Electron Irradiation on the Electronic Structure of KTiOPO4 Crystal
Effect of Atomic Oxygen and Electron Irradiation on the Electronic Structure of KTiOPO4 Crystal
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DOI：
10.1002/crat.202000175
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发表时间：
2021-02
影响因子：
1.5
通讯作者：
Jian Liu;Yan Lu;Junying Hao
中科院分区：
文献类型：
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作者：
Jian Liu;Yan Lu;Junying Hao
KTiOPO 4（KTP）晶体通过顶部籽晶溶液生长法制备。利用空间摩擦学原位分析系统研究了空间辐照对KTP晶体结构的影响：用原子氧（AO）和电子（EL）辐照KTP晶体（001）表面，用X射线光电子能谱（XPS）分析了其电子结构。AO具有强氧化性，导致C1 s峰强度降低。经AO/EL辐照后，P含量增加，而Ti含量减少。与KTP晶体相比，AO/EL辐照后的ΔBE（O─P）显示出更强的P─O键电离性。O 1 s光电子谱线的解卷积结果表明，在530.8-531.0和530.1eV处的峰分别归属于O─P和O─Ti键。另外，O─P键和O─Ti键含量的变化趋势与AO/EL辐照后P和Ti的变化趋势相似。
KTiOPO4 (KTP) crystals are prepared by the top‐seeded solution growth method. Effects of space irradiation on KTP crystal structure have been investigated using Space Tribology in‐situ Analysis System: KTP crystal (001) surfaces were irradiated by atomic oxygen (AO) and electron (EL), and the electronic structure was analyzed using X‐ray photoelectron spectroscopy (XPS). The AO has strong oxidizing property which results in decreases in the intensity of C 1s peak. The content of P increases after AO/EL irradiation, while the content of Ti decreases after AO irradiation. The reduced ΔBE (O─P) shows stronger ionicity of P─O bonds after AO/EL irradiation compared with pristine KTP crystal. The deconvolution of O 1s photoemission line reveals that peaks at 530.8–531.0 and 530.1 eV are assigned to O─P and O─Ti bonds, respectively. Additionally, variations in the trend of O─P bond and O─Ti bond contents are resembled to that of P and Ti after AO/EL irradiation.