Synthesis and luminescence properties of ZnGa2O4 spinel doped with Co2+ and Eu3+ ions
Synthesis and luminescence properties of ZnGa2O4 spinel doped with Co2+ and Eu3+ ions
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DOI：
10.1016/j.apsusc.2012.08.112
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发表时间：
2012-11
影响因子：
6.7
通讯作者：
X. Duan;F. Yu;Yuanchun Wu
中科院分区：
文献类型：
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作者：
X. Duan;F. Yu;Yuanchun Wu
采用柠檬酸盐溶胶-凝胶法合成了Co2+和Eu3+双掺杂的ZnGa2O4纳米粉末，并用X射线粉末衍射仪和X射线光电子能谱对其进行了表征。结果表明，在500℃以上焙烧得到了晶粒度为16-30 nm的尖晶石，Co2+离子取代了Zn2+，Co2+离子占据了尖晶石的四面体位置，Eu3+离子进入晶界缺陷区。Eu掺杂的ZnGa2O4纳米粉末的发射光谱在615 nm处表现出较强的发射，属于Eu3+离子的5D0-7F2跃迁。随着Co的引入，掺Eu的ZnGa2O4在615 nm处的发光强度降低，而在680 nm处的四面体Co2+发光增强。结果表明，Eu3+向Co2+离子发生了能量转移。并通过发光衰减行为研究了其能量传递。Co和Eu共掺杂的ZnGa2O4的发光也随退火温度的升高而变化。通过改变Co和Eu的掺杂浓度和热处理温度，可以控制掺杂的ZnGa2O4纳米粉末的发光性能。
ZnGa2O4nanopowders doped with Co2+and Eu3+ions, including dual doping, have been synthesized by citrate sol–gel method, and characterized by X-ray powder diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Results show that ZnGa2O4spinels were produced by calcining the gel above 500°C, with the crystallite size of 16–30nm in the temperature range of 500–900°C. Co2+ions are located at the tetrahedral sites of ZnGa2O4spinel by replacing Zn2+, and Eu3+ions are incorporated in the defect regions at the grain boundaries. The emission spectra of Eu-doped ZnGa2O4nanopowders display an intense emission at 615nm belonging to5D0–7F2transition of Eu3+ions. With the introduction of Co into Eu-doped ZnGa2O4, the emission intensity at 615nm decreases, while the luminescence at 680nm due to tetrahedral Co2+increases. The result indicates that the energy transfer occurred from Eu3+to Co2+ions. The energy transfer was also studied by the luminescence decay behavior. The emission of Co and Eu Co-doped ZnGa2O4also changed with annealing temperature. The luminescence properties of the doped ZnGa2O4nanopowders can be controlled by the variation of Co and Eu doping concentration and annealing temperature.