Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence
Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence
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DOI：
10.1063/1.4834697
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发表时间：
2013-12
影响因子：
4
通讯作者：
M. Meneghini;S. Carraro;G. Meneghesso;N. Trivellin;G. Mura;F. Rossi;G. Salviati;K. Holc;T. Weig
中科院分区：
文献类型：
--
作者：
M. Meneghini;S. Carraro;G. Meneghesso;N. Trivellin;G. Mura;F. Rossi;G. Salviati;K. Holc;T. Weig
We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.
