Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes
Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes
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DOI：
10.1038/nmat2751
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发表时间：
2010-06-01
期刊：
影响因子：
41.2
通讯作者：
Muccini, Michele
中科院分区：
文献类型：
--
作者：
Capelli, Raffaella;Toffanin, Stefano;Muccini, Michele
基于有机发光二极管（OLED）的显示技术的商业化证明了基于有机发光器的装置用于光产生的潜力。尽管如此，激子猝灭和光子损失过程仍然限制OLED效率和亮度。有机发光晶体管（OLET）是在相同架构中组合薄膜晶体管和电致发光器件的开关机制的替代光源。因此，OLETs可以开启有机光电子学的新时代，并作为解决一般基本光电和光子问题的试验平台。在这里，我们介绍的概念，使用p沟道/发射极/n沟道三层半导体异质结的OLETs，提供了一种新的方法来显着提高OLET的性能，并解决这些悬而未决的问题。在这种结构中，防止激子-电荷湮灭和电极光子损失。我们的器件比同等OLED的效率高100倍以上，比具有相同发光层的优化OLED的效率高2倍以上，比任何其他报道的OLED的效率高10倍以上。
The potential of organic semiconductor-based devices for light generation is demonstrated by the commercialization of display technologies based on organic light-emitting diodes (OLEDs). Nonetheless, exciton quenching and photon loss processes still limit OLED efficiency and brightness. Organic light-emitting transistors (OLETs) are alternative light sources combining, in the same architecture, the switching mechanism of a thin-film transistor and an electroluminescent device. Thus, OLETs could open a new era in organic optoelectronics and serve as testbeds to address general fundamental optoelectronic and photonic issues. Here, we introduce the concept of using a p-channel/emitter/n-channel trilayer semiconducting heterostructure in OLETs, providing a new approach to markedly improve OLET performance and address these open questions. In this architecture, exciton-charge annihilation and electrode photon losses are prevented. Our devices are > 100 times more efficient than the equivalent OLED, > 2x more efficient than the optimized OLED with the same emitting layer and > 10 times more efficient than any other reported OLETs.