A comparative study on high temperature oxidation behavior of SiC, SiC-BN and SiBCN monoliths
A comparative study on high temperature oxidation behavior of SiC, SiC-BN and SiBCN monoliths
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DOI：
10.1016/j.corsci.2021.109855
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发表时间：
2021-09
影响因子：
8.3
通讯作者：
Meng Zhang;Qingqing Chen;Y. He;Yuzhe Hong;Daxin Li;Zhihua Yang;D. Jia;Delong Cai;Z. Niu
中科院分区：
文献类型：
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作者：
Meng Zhang;Qingqing Chen;Y. He;Yuzhe Hong;Daxin Li;Zhihua Yang;D. Jia;Delong Cai;Z. Niu
在本研究中，比较了SiBCN单体材料与SiC和SiC- bn单体材料的氧化行为和氧化机理。在1100 ~ 1300℃时，SiC和SiBCN单块体的氧化层相对光滑致密，而SiC- bn单块体的氧化层被许多气泡破坏。在1500℃进一步氧化后，SiC-BN整体的表面和界面出现了一些裂纹和气泡。SiC相的氧化比C相和BN相的氧化热力学不稳定，但考虑动力学因素后，BN相和/或C相的氧化优先发生。BN(C)相对SiBCN的抗氧化性有积极作用。数据可用性由于法律或道德原因，目前不能共享再现这些发现所需的原始/处理数据。
In this study, the oxidation behavior and mechanism of SiBCN monoliths were compared with SiC and SiC-BN monoliths. At 1100–1300 °C, the oxide layers of SiC and SiBCN monoliths were relatively smooth and dense, while that of SiC-BN monoliths were destroyed by many bubbles. Further oxidized at 1500 °C, some cracks and bubbles appeared on the surfaces and interfaces of SiC-BN monoliths. The oxidation of SiC phases was thermodynamically unstable than that of C and BN, but the oxidation of BN and/or C occurred preferentially after considering the kinetic factors. BN(C) phase has a positive role on SiBCN oxidation resistance.Data availabilityThe raw/processed data required to reproduce these findings cannot be shared at this time due to legal or ethical reasons.