The ß phase formation limit in two poly(9,9-di-n-octylfluorene) based copolymers.
The ß phase formation limit in two poly(9,9-di-n-octylfluorene) based copolymers.
复制标题
两种聚（9,9-二正辛基芴）基共聚物中的α相形成极限。
DOI：
10.1002/marc.201100221
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发表时间：
2011
影响因子：
4.6
通讯作者：
Bright DW
中科院分区：
文献类型：
--
作者：
Bright DW
合成了含有0、8、12、15和20%二苯并噻吩（DBT）的聚（9，9-二正辛基芴）（PF 8）的无规共聚物以及含有2、5、8、12和15%二苯并噻吩-S，S-二氧化物（S-单元）的共聚物。薄膜的吸收和发射光谱表明，随着DBT含量增加至20%截止值，DBT体系显示出甲苯蒸气诱导的β相的线性减少，而在S单元共聚物中，β相存在至高达12%共聚单体含量，并且在15%时，特征吸收峰不存在或被掩蔽。这些结果表明，在薄膜中，在广泛使用的用于器件应用的PF 8共聚物体系中可以形成β相的限制，并且清楚地表明，使用在聚芴主链中具有电子或空穴传输单元的共聚物并且仍然能够形成有效的β相发射位点是实用的。
Random copolymers of poly(9,9‐di‐n‐octylfluorene) (PF8) incorporating 0, 8, 12, 15, and 20% dibenzothiophene (DBT), and copolymers with 2, 5, 8, 12, and 15% dibenzothiophene‐S,S‐dioxide (S‐unit) were synthesised. Absorption and emission spectra of thin films indicate that the DBT system shows a linear decrease of toluene vapour induced β phase with increasing DBT content to a 20% cutoff, whilst in the S‐unit copolymers the β phase is present up to 12% co‐monomer content, and at 15% the characteristic absorption peak is absent or masked. These results demonstrate the limits, in thin films, at which the β phase can be formed in widely used PF8 copolymer systems for device applications and clearly show that it is practical to use copolymers having electron or hole transport units in the polyfluorene backbone and still be able to form efficient β phase emission sites.