Growth of ZnO Thin Film by Laser MBE: Lasing of Exciton at Room Temperature
Growth of ZnO Thin Film by Laser MBE: Lasing of Exciton at Room Temperature
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DOI：
10.1002/1521-3951(199708)202:2
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发表时间：
1997-08
影响因子：
1.6
通讯作者：
Y. Segawa;A. Ohtomo;M. Kawasaki;H. Koinuma;Zikang Tang;P. Yu;G. Wong
中科院分区：
文献类型：
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作者：
Y. Segawa;A. Ohtomo;M. Kawasaki;H. Koinuma;Zikang Tang;P. Yu;G. Wong
采用激光分子束外延技术生长了高质量的ZnO薄膜。在超高真空中，用KrF激光脉冲（248 nm，10 Hz，1 J/cm 2）烧蚀纯陶瓷ZnO靶，在蓝宝石（0001）衬底上制备了存款ZnO薄膜。对于厚度为55 nm的样品，横向晶粒尺寸约为50 nm。在室温下，激子吸收峰和光致发光峰具有相同的能量。在高密度激发（355 nm，35 ps，10 Hz）下，观察到激子-激子碰撞过程，表现为2S激子和电离激子残留的P2和P线。从样品的边缘观察到，随着激发功率的增加，P线非常迅速地增加。还观察到来自腔模式的精细结构。这些事实表明，激子的激光在室温下观察。
High quality ZnO thin film was grown by Laser MBE. A pure ceramic ZnO target was ablated by the KrF laser pulses (248 nm, 10 Hz, 1 J/cm2) in an ultra high vacuum to deposit ZnO film on sapphire (0001) substrate. The lateral grain size was about 50 nm for the sample with thickness of 55 nm. At room temperature, the peak of the exciton absorption and the photoluminescence have the same energy. Under high density excitation (355 nm, 35 ps, 10 Hz), an exciton–exciton collision process was observed as P2 and P lines where 2S exciton and ionized exciton remain. From the edge of the sample, a very rapid increase of the P line was observed with the increase of the excitation power. A fine structure that comes from the cavity mode was also observed. These facts suggest that the lasing of the exciton was observed at room temperature.