Intersubband Relaxation Dynamics in Narrow InGaAs/AlAsSb Quantum Well Structures Studied by Femtosecond Pump‐Probe Spectroscopy
Intersubband Relaxation Dynamics in Narrow InGaAs/AlAsSb Quantum Well Structures Studied by Femtosecond Pump‐Probe Spectroscopy
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飞秒泵浦探测光谱研究窄 InGaAs/AlAsSb 量子阱结构中的子带间弛豫动力学
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发表时间：
2007
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通讯作者：
H. Künzel
中科院分区：
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作者：
C. Tribuzy;S. Ohser;S. Winnerl;J. Grenzer;H. Schneider;M. Helm;J. Neuhaus;T. Dekorsy;K. Biermann;H. Künzel
利用飞秒泵浦探测光谱技术，研究了调制掺杂InGaAs/AlAsSb多量子阱(QW)不同厚度的子带驰豫动力学。在早期延迟时间，样本显示出瞬时传输随皮秒时间常数的指数衰减。在延迟时间较晚时，弛豫动力学依赖于量子波厚度。缓慢衰变分量的存在表明电子转移到与势垒中的间接谷有关的状态。通过求解三能级速率方程进一步证实了这一结果。
Intersubband relaxation dynamics in modulation doped InGaAs/AlAsSb multiquantum well (QW), with different QW thicknesses was investigated by femtosecond pump‐probe Spectroscopy. At early delay times, the samples show an exponential decay of the transient transmission with picosecond time constants. At later delay times, the relaxation dynamics depends on QW thickness. The presence of a slowly decaying component indicates the transfer of electrons to states related to indirect valleys in the barriers. This result is further confirmed by solving three‐level rate equations.