Very high precision analog trimming using floating gate MOSFETS
Very high precision analog trimming using floating gate MOSFETS
复制标题
使用浮栅 MOSFET 进行超高精度模拟微调
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
R. Geiger
中科院分区：
文献类型：
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作者：
J. Sweeney;R. Geiger
随着薄栅技术的改进和工艺复杂性的增加，在基本CMOS或BiMOS工艺中增加浮栅MOS晶体管选项正被认为是一种可行的选择。使用的设备作为无限分辨率的非易失性存储设备和精密模拟微调元件进行了讨论。实验结果专注于编程分辨率和时间稳定性的电荷保持。>
The addition of a floating gate MOS transistor option to basic CMOS or BiMOS processes is becoming recognized as a viable option with improvements in thin gate technology and the practical acceptance of increased process complexity. The use of the devices as infinite resolution nonvolatile storage devices and as precision analog trim elements are discussed. Experimental results focusing on the programming resolution and time-stability of the charge retention are presented. >