Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
复制标题
催化化学气相沉积和连续快速热退火形成低电阻率掺磷多晶硅薄膜
DOI：
10.1143/jjap.41.501
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发表时间：
2002
影响因子：
1.5
通讯作者：
H. Matsumura
中科院分区：
文献类型：
--
作者：
Rui Morimoto;A. Izumi;A. Masuda;H. Matsumura
采用催化化学气相沉积 (Cat-CVD) 和连续快速热退火 (RTA) 沉积的非晶硅 (a-Si) 薄膜制备低电阻率磷 (P) 掺杂多晶硅 (poly-Si) 薄膜。在 1000°C 下进行 RTA 结晶，通过 Cat-CVD 制备重磷掺杂非晶硅。由于氢 (H) 含量低，这些薄膜适合固相结晶 (SPC) 工艺。结果表明，通过RTA在1000℃下仅5s即可实现结晶和0.001Ω·cm的低电阻率。即使在高温 RTA 工艺之后，也能保持完美的表面平整度，并且不会观察到由于薄膜中的氢原子而导致的剥离或气泡。
Low-resistivity phosphorus (P)-doped polycrystalline silicon (poly-Si) thin films were prepared from amorphous silicon (a-Si) films deposited by catalytic chemical vapor deposition (Cat-CVD) and successive rapid thermal annealing (RTA). RTA was carried out at 1000°C for crystallization of heavily P-doped a-Si prepared by Cat-CVD. The films are suitable for the solid-phase crystallization (SPC) process because of their low hydrogen (H) content. It is revealed that both the crystallization and low resistivity of 0.001 Ω·cm are realized by RTA at 1000°C for only 5 s. Even after high-temperature RTA processes, perfect surface-flatness is maintained and neither peeling nor bubbling due to H atoms in the films is observed.