Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance
Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance
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DOI：
10.1109/iedm.2009.5424297
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发表时间：
2009-12
期刊：
影响因子：
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通讯作者：
K. Nagashio;T. Nishimura;K. Kita;A. Toriumi
中科院分区：
文献类型：
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作者：
K. Nagashio;T. Nishimura;K. Kita;A. Toriumi
石墨烯在SiO2上具有超过10,000 cm2/Vs的高载流子迁移率，作为未来高速晶体管材料的有前途的候选材料而受到广泛关注。石墨烯与金属电极之间的接触电阻（RC）对实现石墨烯的潜在高性能至关重要，无论是从物理学还是从实践的角度来看。本文通过分离石墨烯的本征导电性来讨论金属/石墨烯的接触特性。
Graphene with a high carrier mobility of more than 10,000 cm2/Vs on SiO2 has attracted much attention as a promising candidate of future high-speed transistor materials. The contact resistance (RC) between graphene and metal electrodes is crucially important for achieving potentially high performance of graphene from both physics and practical viewpoints. This paper discusses metal/graphene contact properties by separating from the intrinsic conduction of graphene.