Point Defect Clusters in Electron-Irradiated Gold
Point Defect Clusters in Electron-Irradiated Gold
复制标题
电子辐照金中的点缺陷簇
DOI：
10.1143/jpsj.35.1418
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发表时间：
1973
影响因子：
1.7
通讯作者：
M. Kiritani
中科院分区：
文献类型：
--
作者：
N. Yoshida;M. Kiritani
用高压电子显微镜研究了2.0 ~ 2.5MeV电子辐照金的缺陷形成。位错环的形成通常先于空位缺陷的形成。永久性凹陷，如试样表面和位错，防止形成间隙型缺陷，并促进空位簇缺陷的形成。一个快速形成的空位型缺陷和同时收缩的间隙型循环后停止照射观察。点缺陷行为的动力学分析，站在杂质和空位的随机迁移的立场上，把所观察到的各种现象解释为两种点缺陷在各种情况下的竞争过程。间隙型缺陷密度与辐照强度的关系表明，双异质结是间隙型缺陷的稳定核。
Defect formation in gold by the irradiation of 2.0∼2.5 MeV electrons was studied with a high voltage electron microscope. The formation of dislocation loops by the aggregation of interstitials generally precedes the formation of the defects by vacancies. Permanent sinks, such as specimen surfaces and dislocations, prevent the formation of interstitial type of defects and enhance the formation of vacancy clustered defects. A rapid formation of the vacancy type defects and the simultaneous shrinkage of interstitial type loops after the cessation of the irradiation are observed. Kinetics analysis of the point defect behaviour, standing on the random migration of interstitials and vacancies, explains all the observed various phenomena as the competition processes between two kinds of point defects under various circumstances. The irradiation intensity dependence of the density of interstitial type defects shows that the di-interstitials are their stable nucleus.