Current-crowding-induced electromigration failure in flip chip solder joints
Current-crowding-induced electromigration failure in flip chip solder joints
复制标题
DOI：
10.1063/1.1432443
复制
发表时间：
2002-01-28
影响因子：
4
通讯作者：
Balkan, H
中科院分区：
文献类型：
--
作者：
Yeh, ECC;Choi, WJ;Balkan, H
在倒装芯片焊点中，焊料凸块的横截面比互连线的横截面大一到两个数量级。在凸块和引线之间的接触界面处，发生非常大的电流拥挤，并且其在凸块中引起独特且快速的电迁移失效。本文对倒装焊凸点中的电流拥挤现象进行了模拟。真实的倒装焊凸点的实验结果表明，空洞的形成开始于接触的电流拥挤区域附近，成核后迅速扩展到整个接触区域。通过设计焊料凸点以实现均匀的电流分布，可以提高其抗电迁移能力，增加其载流能力。(C)2002年美国物理学会。
In a flip chip solder joint, the cross-section of the solder bump is one to two orders of magnitude bigger than that of an interconnect wire. At the contact interface between the bump and the wire, a very large current crowding occurs and it causes a unique and fast electromigration failure in the bump. Simulation of the current crowding phenomenon in a flip chip solder bump is reported here. Experimental results of real flip chip solder bumps show that void formation begins near the current crowding region of the contact, and after it is nucleated, it spreads quickly across the contact area. By designing the solder bump to achieve a uniform current distribution, we can improve its electromigration resistance and increase its current carrying capacity. (C) 2002 American Institute of Physics.