LPE growth of AlN single crystal using cold crucible under atmospheric nitrogen gas pressure
LPE growth of AlN single crystal using cold crucible under atmospheric nitrogen gas pressure
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常压氮气压力下使用冷坩埚 LPE 生长 AlN 单晶
DOI：
10.1002/pssc.200674727
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
A. Yauchi
中科院分区：
文献类型：
--
作者：
Tanaka Takashi;Nobuyoshi Yashiro;Y. Shirai;K. Kamei;A. Yauchi
我们用1500-1600 °C的Al-Cu溶液在6 H-SiC衬底上生长了AlN单晶。氮气在大气压下由气相供给，并采用冷坩埚技术。在10 μm/h的生长速率下，AlN的厚度达到40 μm。溶液法生长速率较高是由于熔体表面积的增加、熔体的动态对流和沿着籽晶轴的高温度梯度，而这些在冷坩埚技术中容易实现。透射电镜观察表明，界面处10μm以外的位错密度降低了10的-1或-2次方。在衬底和AlN外延层之间包含的熔体减轻了外延层中的应力并减少了裂纹。（© 2007 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have grown AlN single crystal on 6H-SiC substrate using Al-Cu solution of 1500-1600 °C. Nitrogen is supplied from gas phase under atmospheric pressure and the cold crucible technique is applied. Thickness of AlN reached 40 μm with the growth rate of 10 μm/h. Rather high growth rate in solution method is due to the increase in the melt surface area, dynamic convection of the melt and high temperature gradient along the seeded axis, which are easily realized in cold crucible technique. TEM observation reveals that the dislocation density beyond 10μm from the interface decreases by a factor of 10 to the power of -1 or -2. The melt included in between the substrate and AlN epi-layer eases stress in epi-layer and reduces cracks. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)