Self-aligned double patterning layout decomposition with complementary e-beam lithography
Self-aligned double patterning layout decomposition with complementary e-beam lithography
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DOI：
10.1109/aspdac.2014.6742880
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发表时间：
2014-02
期刊：
影响因子：
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通讯作者：
Jhih-Rong Gao;Bei Yu;D. Pan
中科院分区：
文献类型：
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作者：
Jhih-Rong Gao;Bei Yu;D. Pan
先进的光刻技术可以实现更高的图案分辨率；然而，极紫外光刻和电子束光刻(EBL)等技术还没有准备好大规模生产。近年来，互补光刻变得很有前途，它允许两种不同的光刻工艺协同工作，在不增加太多制造成本的情况下实现高质量的布局图案。本文提出了一种新的版图分解框架，该框架同时考虑了叠加层最小化和EBL吞吐量优化。我们通过合并和切割技术进行冲突消除，并将其描述为基于匹配的问题。结果表明，该方法快速有效，以最小的重叠误差和电子束利用率解决了所有冲突。
Advanced lithography techniques enable higher pattern resolution; however, techniques such as extreme ultraviolet lithography and e-beam lithography (EBL) are not yet ready for high volume production. Recently, complementary lithography has become promising, which allows two different lithography processes work together to achieve high quality layout patterns while not increasing much manufacturing cost. In this paper, we present a new layout decomposition framework for self-aligned double patterning and complementary EBL, which considers overlay minimization and EBL throughput optimization simultaneously. We perform conflict elimination by merge-and-cut technique and formulate it as a matching-based problem. The results show that our approach is fast and effective, where all conflicts are solved with minimal overlay error and e-beam utilization.