A New Silicon Boride, SiB4
A New Silicon Boride, SiB4
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DOI：
10.1038/185456a0
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发表时间：
1960-02
期刊：
影响因子：
64.8
通讯作者：
C. F. Cline;D. Sands
中科院分区：
文献类型：
--
作者：
C. F. Cline;D. Sands
THE existence of compounds in the silicon–boron system has been a subject of conjecture for more than fifty years, since the many studies that have been made have produced negative, inconclusive, or contradicting results. Moissan and Stock1, in the original work on the system, reported that by fusion of the elements they were able to prepare two compounds, SiB3and SiB6. The SiB3was obtained as black rhombic plates with a density of 2.52 gm./cm.3, and the SiB6as black irregular crystals with a density of 2.47 gm./cm.3. The borides were reported to have high melting points, high hardness, and to be conductors of electricity, properties which prompted future workers to conduct further investigations.
