Temperature dependence of the negative bias temperature instability in the framework of dispersive transport
Temperature dependence of the negative bias temperature instability in the framework of dispersive transport
复制标题
色散传输框架中负偏压温度不稳定性的温度依赖性
DOI：
10.1063/1.1897046
复制
发表时间：
2005
影响因子：
4
通讯作者：
M. Goodwin
中科院分区：
文献类型：
--
作者：
B. Kaczer;V. Arkhipov;R. Degraeve;N. Collaert;G. Groeseneken;M. Goodwin
研究了具有超薄栅氧化层的多栅场效应晶体管的负偏压温度不稳定性。观察到这些器件的阈值电压漂移服从时间的幂函数，其指数与温度成线性关系。提出了一个解析模型，该模型通过氢在栅氧化层中的弥散扩散来解释这种温度依赖性。基于实验数据和模型，我们得出结论：NBTI本质上是一个非阿累尼乌斯过程。
Negative bias temperature instability (NBTI) is studied in multiple-gate field-effect transistors with an ultrathin gate oxide. It is observed that the threshold voltage shift in these devices follows a power-law function of time, with the exponent depending linearly on temperature. An analytic model is proposed that explains this temperature dependence by dispersive diffusion of hydrogen in the bulk of the gate oxide. Based on both the experimental data and the model, it is concluded that NBTI is an inherently non-Arrhenius process.