TEMPERATURE DEPENDENCE OF THE RADIATIVE LIFETIME IN GAN
TEMPERATURE DEPENDENCE OF THE RADIATIVE LIFETIME IN GAN
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DOI:
10.1103/physrevb.58.r15977
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发表时间:
1998-12
影响因子:
3.7
通讯作者:
O. Brandt;J. Ringling;K. Ploog;H. Wünsche;F. Henneberger
中科院分区:
文献类型:
--
作者:
O. Brandt;J. Ringling;K. Ploog;H. Wünsche;F. Henneberger
Using time-resolved photoluminescence spectroscopy, we determine the temperature dependence of the radiative lifetime for GaN layers with doping levels from ${10}^{16}$ to ${10}^{18}{\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}.$ The experimental results are analyzed by a coupled rate-equation model taking into account band-to-band, free and bound excitons, as well as donor-to-band recombination. An analytic expression for the radiative lifetime of this coupled system is derived and fit to the data. Over the entire temperature range, radiative recombination is strongly affected by the decay of either bound or free excitons. The temperature dependence and the absolute values for the radiative lifetime are governed by the coupling between the individual populations. This coupling in turn is determined by the binding energies of the respective species. Using a binding energy of 26.4 meV for the free exciton, we obtain best-fit values of $30\ifmmode\pm\else\textpm\fi{}6$ and $36.3\ifmmode\pm\else\textpm\fi{}2\mathrm{meV}$ for the donor and the donor-bound exciton, respectively.