Manufacturing-tolerant compact red-emitting laser diode designs for next generation applications
Manufacturing-tolerant compact red-emitting laser diode designs for next generation applications
复制标题
DOI：
10.1049/iet-opt.2014.0093
复制
发表时间：
2015-02
影响因子：
1.6
通讯作者：
S. Elliott;P. Smowton
中科院分区：
文献类型：
--
作者：
S. Elliott;P. Smowton
具有低远场发散的量子阱激光二极管仍然是许多应用的要求，例如光学互连和数据网络、泵浦光源和下一代全息红绿蓝显示器，这些应用要求紧凑、高功率、具有高空间和光谱相干性的可见光光源。存在许多设计，但结构必须易于重复生长，这具有商业优势。作者的低远场发散设计使垂直模式变宽，从而在不显著降低限制因子的情况下减小远场发散，从而保持较低的阈值电流。在这项研究中，作者计算了在包层中插入高折射率模式扩展层的设计对生长过程中层厚度和成分的无意变化的敏感性。它们在一年内生长的三个晶片的测量远场中获得了一致性，窄设计(设计A)的全宽-半最大垂直远场发散为17°，而非常窄的设计(设计B)的远场发散略低于13°。它们展示了一种有用的、可重复使用的设计，增加了可用于各种应用的多功能半导体激光器的范围。
Quantum well laser diodes with low far-field divergence remain a requirement for many applications such as optical interconnects and data networks, pump sources and next generation holographic red–green–blue displays requiring compact, high power, visible light sources with high spatial and spectral coherence. Many designs exist, but the structure must be easy to grow reproducibly, which has commercial advantages. The authors' low far-field divergence design widens the vertical mode in such a way as to decrease the far-field divergence without significantly reducing the confinement factor, thus keeping threshold current lower. In this study, the authors calculate the sensitivity of their design, which has high refractive index mode expansion layers inserted in the cladding, to unintentional variations in layer thickness and composition during growth. They obtain consistency in measured far-fields for three wafers grown over an interval of a year, with a full-width-half-maximum vertical far-field divergence of 17° for a narrow design (Design A) and just under 13° for a very narrow design (Design B). They have demonstrated a useful, reproducible design, adding to the range of versatile semiconductor lasers available for every application.