Bandgap opening in graphene induced by patterned hydrogen adsorption
Bandgap opening in graphene induced by patterned hydrogen adsorption
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DOI：
10.1038/nmat2710
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发表时间：
2010-04-01
期刊：
影响因子：
41.2
通讯作者：
Hornekaer, Liv
中科院分区：
文献类型：
--
作者：
Balog, Richard;Jorgensen, Bjarke;Hornekaer, Liv
石墨烯是一种单层石墨，由于其显着的电子和结构特性及其在许多新兴领域（如石墨烯基电子器件）中的可能应用，最近引起了相当大的关注（1）。石墨烯中的电荷载流子表现得像无质量的狄拉克费米子，石墨烯显示出弹道电荷传输，使其成为电路制造的理想材料（2，3）。然而，石墨烯在费米能级附近缺乏带隙，费米能级是半导体材料的定义概念，并且对于通过电子手段控制导电性至关重要。理论预测，可以通过石墨烯晶格的周期性调制来设计可调带隙（4-6），但到目前为止还缺乏实验证据。在这里，我们证明了在石墨烯中的带隙开口的存在，诱导的原子氢的图案化吸附到的莫尔超晶格位置上的石墨烯生长在Ir（111）衬底上。
Graphene, a single layer of graphite, has recently attracted considerable attention owing to its remarkable electronic and structural properties and its possible applications in many emerging areas such as graphene-based electronic devices(1). The charge carriers in graphene behave like massless Dirac fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication(2,3). However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory predicts that a tunable bandgap may be engineered by periodic modulations of the graphene lattice(4-6), but experimental evidence for this is so far lacking. Here, we demonstrate the existence of a bandgap opening in graphene, induced by the patterned adsorption of atomic hydrogen onto the Moire superlattice positions of graphene grown on an Ir(111) substrate.