III/V silicon hybrid laser based on a resonant Bragg structure
III/V silicon hybrid laser based on a resonant Bragg structure
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DOI：
10.1364/ao.390522
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发表时间：
2020-05-01
期刊：
影响因子：
1.9
通讯作者：
Fainman, Yeshaiahu
中科院分区：
文献类型：
--
作者：
Davis, Jordan A.;Kim, Myun Sik;Fainman, Yeshaiahu
We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based. Fabry-Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip. (C) 2020 Optical Society of America
