Visible photonic band gap engineering in silicon nitride waveguides
Visible photonic band gap engineering in silicon nitride waveguides
复制标题
氮化硅波导中的可见光子带隙工程
DOI：
10.1063/1.125916
复制
发表时间：
2000
影响因子：
4
通讯作者：
J. Baumberg
中科院分区：
文献类型：
--
作者：
M. Netti;M. Charlton;G. Parker;J. Baumberg
实验证明了氮化硅图像化波导中全光子带隙的调谐。透射测量使用超宽带高亮度白光激光连续体进行，在间隙区域提取低至10-4的消光比。角分辨测量表明，间隙在-J方向上完美对齐。©2000美国物理研究所。[s0003 - 6951 (00) 02008 - 8]
We demonstrate experimentally the tuning of complete photonic band gaps in patterned silicon nitride waveguides. Transmission measurements were performed using an ultrabroadband high-brightness white light laser continuum, extracting extinction ratios as low as 10–4 in the gap regions. Angle-resolved measurements show the perfect alignment of the gap around the -J direction. © 2000 American Institute of Physics. [S0003-6951(00)02008-8]