Ga-Zn-V-Zn acceptor complex defect in Ga-doped ZnO
Ga-Zn-V-Zn acceptor complex defect in Ga-doped ZnO
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Ga 掺杂 ZnO 中的 Ga-Zn-V-Zn 受体复合物缺陷
DOI：
10.1007/s11433-018-9195-7
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
Du XiaoLong
中科院分区：
文献类型：
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作者：
Tang AiHua;Mei ZengXia;Hou YaoNan;Liu LiShu;Venkatachalapathy Vishnukanthan;Azarov Alex;er;Kuznetsov Andrej;Du XiaoLong
镓（Ga）掺杂ZnO被认为是一种有前途的等离子体材料，在等离子体学中具有广泛的应用。在本研究中，采用锌自扩散实验来揭示Ga掺杂ZnO同位素异质结构中主要补偿缺陷的性质。 (GaZn-VZn)−复合缺陷，而不是孤立的 VZn2−，被认为是导致低施主掺杂效率的主要补偿受体中心。通过二次离子质谱法进行的比较扩散实验揭示了这种复杂缺陷的~0.78 eV 结合能，这与温度相关的霍尔效应测量得出的电活化能（~（0.82±0.02）eV）很好地匹配。这些发现有助于对 (GaZn-VZn) 复合缺陷和重度 Ga 掺杂 ZnO 的潜在工程路线的基本理解。
Gallium (Ga)-doped ZnO is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant compensating defect in Ga-doped ZnO isotopic heterostructures. The (GaZn-VZn)−complex defect, instead of the isolated VZn2−, is identified as the predominant compensating acceptor center responsible for the low donor doping efficiency. The comparative diffusion experiments operated by the secondary ion mass spectrometry reveal a ~0.78 eV binding energy of this complex defect, which well matches the electrical activation energy derived from the temperature-dependent Hall effect measurements (~(0.82±0.02) eV). These findings contribute to an essential understanding of the (GaZn-VZn)−complex defect and the potential engineering routes of heavily Ga-doped ZnO.