Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy
Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy
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DOI：
10.1063/1.1493229
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发表时间：
2002-07-15
影响因子：
4
通讯作者：
Johnson, NM
中科院分区：
文献类型：
--
作者：
Renner, F;Kiesel, P;Johnson, NM
报道了纤锌矿 InGaN/GaN 量子阱的电吸收测量。电吸收技术可以对 InGaN 量子阱和势垒层中的吸收和吸收变化进行精确的定量分析，记录的场致吸收变化在能带边缘下方可达 7000 cm(-1)，上方近 20000 cm(-1)。因此，该技术可以精确确定源自应变诱发极化和自发极化差异的强内部场。当 InGaN 量子阱中的铟浓度为 7% 至 9% 时，在正常工作的二极管上测得的场在 1.1 至 1.4 MV/cm 之间变化。 (C) 2002 年美国物理研究所。
Electroabsorption measurements are reported for wurtzite InGaN/GaN quantum wells. The electroabsorption technique allows exact quantitative analysis of absorption and absorption changes in InGaN quantum wells and barrier layers, with recorded field-induced absorption changes as large as 7000 cm(-1) below and almost 20000 cm(-1) above the band edge. The technique thus allows precise determination of the strong internal fields that originate from strain-induced polarization and differences in spontaneous polarization. The fields measured on functioning diodes vary between 1.1 and 1.4 MV/cm for indium concentrations in InGaN quantum wells ranging from 7% to 9%. (C) 2002 American Institute of Physics.