ZnO Thin-Film Transistor Ring Oscillators with 31-ns Propagation Delay
ZnO Thin-Film Transistor Ring Oscillators with 31-ns Propagation Delay
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DOI：
10.1109/led.2008.923206
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发表时间：
2008-07
影响因子：
4.9
通讯作者：
Jie J. Sun;D. Mourey;D. Zhao;S. Park;S. Nelson;D. Levy;D. Freeman;P. Cowdery-Corvan;L. Tutt;T. Jackson
中科院分区：
文献类型：
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作者：
Jie J. Sun;D. Mourey;D. Zhao;S. Park;S. Nelson;D. Levy;D. Freeman;P. Cowdery-Corvan;L. Tutt;T. Jackson
我们已经制作了环形振荡器（RO）使用ZnO薄膜沉积通过使用空间原子层沉积工艺在大气压和低温（200摄氏度）。制作了具有铝源极和漏极接触的底栅薄膜晶体管，其场效应迁移率> 15 cm 2/V ldr s。七级RO工作在高达2.3 MHz的频率为25 V的电源电压，对应于31 ns/级的传播延迟。这些电路在15 V电源电压下的传播延迟约为100 ns/级。据我们所知，这些是迄今为止报道的最快ZnO电路。
We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200degC). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15 cm2/V ldr s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage of 25 V, corresponding to a propagation delay of 31 ns/stage. These circuits also had propagation delays of ~100 ns/stage at a supply voltage of 15 V. To the best of our knowledge, these are the fastest ZnO circuits reported to date.