Effect of thermal annealing on the optical and electronic properties of ZnO thin films grown on p-Si substrates
Effect of thermal annealing on the optical and electronic properties of ZnO thin films grown on p-Si substrates
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DOI：
10.1016/j.apsusc.2004.10.033
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发表时间：
2005-05
影响因子：
6.7
通讯作者：
Won-Kyu Han;S. G. Kang;T. W. Kim;Dongwan Kim;W. Cho
中科院分区：
文献类型：
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作者：
Won-Kyu Han;S. G. Kang;T. W. Kim;Dongwan Kim;W. Cho
通过 X 射线衍射 (XRD)、透射电子显微镜 (TEM)、光致发光 (PL) 和 X 射线光电子能谱 (XPS) 测量研究了退火对射频磁控溅射在 p-Si(100) 衬底上生长的 ZnO 薄膜的光学和电子性能的影响。 XRD 图谱和极图表明，热处理提高了 p-Si(100) 衬底上生长的 ZnO 薄膜的结晶度。 XRD图谱、极图和TEM图像表明，在Si(100)衬底上生长的ZnO薄膜和退火后的ZnO薄膜在[0001]晶体方向上具有c轴择优取向。 PL光谱显示退火后出现了与自由激子相关的发光峰和深能级。 XPS 谱显示热处理后对应于 O 1s 和 Zn 2p 的峰位置略有移动。这些结果有助于加深对 p-Si(100) 基板上生长的 ZnO 薄膜的光学和电子特性的热效应的理解。
The effects of annealing on the optical and the electronics properties of ZnO thin films grown on p-Si(100) substrates by using radio frequency magnetron sputtering were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements. The XRD patterns and pole figures showed that the crystallinity of the ZnO films grown on p-Si(100) substrates was improved by thermal treatment. XRD patterns, pole figures, and TEM images showed that the as-grown and the annealed ZnO films grown on Si(100) substrates had a c-axis preferential orientation in the [0001] crystal direction. The PL spectra showed that luminescence peaks related to the free excitons and the deep levels appeared after annealing. The XPS spectra showed that the peak positions corresponding to the O 1s and the Zn 2p shifted slightly after thermal treatment. These results can help improve understanding of thermal effects on the optical and the electronic properties of ZnO thin films grown on p-Si(100) substrates.