Novel ESD protection structure with embedded SCR LDMOS for smart power technology
Novel ESD protection structure with embedded SCR LDMOS for smart power technology
复制标题
DOI：
10.1109/relphy.2002.996629
复制
发表时间：
2002-08
期刊：
影响因子：
--
通讯作者：
Jian-Hsing Lee;J. Shih;C.S. Tang;Kun Liu;Y.H. Wu;R. Shiue;T. Ong;Y.K. Peng;J. Yue
中科院分区：
文献类型：
--
作者：
Jian-Hsing Lee;J. Shih;C.S. Tang;Kun Liu;Y.H. Wu;R. Shiue;T. Ong;Y.K. Peng;J. Yue
提出了一种适用于智能电源技术的新型ESD保护结构。通过在40 V-LDMOS功率晶体管的漏极区插入P+扩散区，可以在不改变40 V-LDMOS功率晶体管直流I-V特性的情况下，实现嵌入式SCR（ESCR-LDMOS）器件。在漏区插入P+带（N+在NW中）的方法可以将HBM的ESD失效阈值从1 kV提高到6 kV，将MM的ESD失效阈值从100 V提高到350 V。
In this paper, a new robust ESD protection structure has been proposed for smart power technology. By inserting a P+ diffusion into the drain region of 40 V-LDMOS power transistor, the embedded SCR (ESCR-LDMOS) device can be built and without changing any DC I-V characteristics of a 40 V-LDMOS power transistor. It is also found that the method with P+ strap inserted into drain region (N+ in NW) can improve the ESD failure threshold from 1 kV to 6 kV for HBM and from 100 V to 350 V for MM.