Through Silicon Via (TSV) Defect Modeling, Measurement, and Analysis
Through Silicon Via (TSV) Defect Modeling, Measurement, and Analysis
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DOI：
10.1109/tcpmt.2016.2631731
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发表时间：
2017-01-01
影响因子：
2.2
通讯作者：
Kim, Joungho
中科院分区：
文献类型：
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作者：
Jung, Daniel H.;Kim, Youngwoo;Kim, Joungho
基于硅通孔（TSV）的3-D集成电路已经引入了对电子设备的高系统带宽、低功耗和小形状因子的无限增长的需求的解决方案。由于系统设计的目标是更高的性能，信道的物理尺寸不断减小。由于TSV直径小于10 μ m，间距为几十微米，I/O数量增加到数万数量级，用于宽带数据传输。然而，在没有高度精确的制造工艺的情况下，这样的小结构容易受到各种缺陷的影响。本文首次提出了一种针对高速TSV沟道的非侵入式缺陷分析方法。设计和制造的测试车辆，所提出的方法是证明与S参数和时域反射测量结果。此外，我们提出了TSV菊花链结构的等效电路模型，包括开路缺陷和短路缺陷的电路元件。在每个频率范围内的特征主导因素，S-11分析，以区分和定位的电容，电阻和电感的信号经历的量的缺陷。S参数测量充分允许TSV沟道的高频缺陷分析，而不破坏测试样品。我们通过比较电路模拟和测量的S参数结果，实验验证了所建议的模型的准确性。最后，对模型进行了修正，讨论了开路缺陷和短路缺陷对TSV沟道电学特性的影响。
Through silicon via (TSV)-based 3-D integrated circuit has introduced the solution to limitlessly growing demand on high system bandwidth, low power consumption, and small form factor of electronic devices. As the system design aims for higher performance, the physical dimensions of the channels are continuously decreasing. With TSV diameter of less than 10 mu m and pitch of several tens of micrometers, the I/O count has increased up to the order of tens of thousands for wide bandwidth data transmission. However, without highly precise fabrication process, such small structures are susceptible to a variety of defects. For the first time, in this paper, we propose a noninvasive defect analysis method for high-speed TSV channel. With designed and fabricated test vehicles, the proposed method is demonstrated with S-parameter and time-domain reflectometry measurement results. In addition, we present equivalent circuit models of TSV daisy-chain structures, including the circuit components for open defect and short defect. With characterized dominant factors in each frequency range, S-11 is analyzed to distinguish and locate the defects by the amount of capacitance, resistance, and inductance that the signal experiences. S-parameter measurement sufficiently allows high-frequency defect analysis of TSV channel without destroying the test sample. We experimentally verified the accuracy of the suggested model by comparing the S-parameter results from circuit simulations and measurements. Finally, the model is modified to discuss the effects of open defect and short defect on the electrical characteristics of TSV channel.