56 Gbps high-speed Ge electro-absorption modulator
56 Gbps high-speed Ge electro-absorption modulator
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56 Gbps 高速 Ge 电吸收调制器
DOI：
10.1364/prj.401140
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发表时间：
2020-10-01
影响因子：
7.6
通讯作者：
Cheng, Buwen
中科院分区：
文献类型：
--
作者：
Liu, Zhi;Li, Xiuli;Cheng, Buwen
在绝缘体上硅平台上用220 nm的硅顶层实现了一种工艺简单的高速倏逝波耦合锗波导电吸收调制器（EAM）。选择性生长的三角形Ge直接用于EAM的Ge波导。在Ge波导中设计了一个非对称的p-i-n结，为Franz-Keldysh效应提供了强电场。Ge EAM在1610 nm处的插入损耗为6.2 dB。EAM在-1 V下显示出36 GHz的高电光带宽。在1610 nm下观察到清晰的开放56 Gbps眼图，动态消光比为2.7 dB，电压摆幅为3V（pp）时的动态功耗为45 fJ/bit。(C)2020中国激光出版社
A high-speed evanescent-coupled Ge waveguide electro-absorption modulator (EAM) with simple fabrication processes was realized on a silicon-on-insulator platform with a 220 nm top Si layer. Selectively grown Ge with a triangle shape was directly used for Ge waveguides of the EAM. An asymmetric p-i-n junction was designed in the Ge waveguide to provide a strong electric field for Franz-Keldysh effect. The insertion loss of the Ge EAM was 6.2 dB at 1610 nm. The EAM showed the high electro-optic bandwidth of 36 GHz at -1 V. Clear open 56 Gbps eye diagrams were observed at 1610 nm with a dynamic extinction ratio of 2.7 dB and dynamic power consumption of 45 fJ/bit for voltage swing of 3V(pp). (C) 2020 Chinese Laser Press