Transient Characteristics of Interdigitated GaAs Photoconductive Semiconductor Switch at 1-kHz Excitation
Transient Characteristics of Interdigitated GaAs Photoconductive Semiconductor Switch at 1-kHz Excitation
复制标题
叉指式 GaAs 光电导半导体开关在 1kHz 激励下的瞬态特性
DOI：
10.1109/led.2019.2916427
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发表时间：
2019
影响因子：
4.9
通讯作者：
Schneider Harald
中科院分区：
文献类型：
--
作者：
Xu Ming;Liu Xiaofei;Li Mengxia;Liu Kai;Qu Guanghui;Wang Vei;Hu Long;Schneider Harald
为了探索具有雪崩倍增机制的砷化镓（GaAs）光导半导体开关（pcss）的稳定性，在1 khz的飞秒激光激励下，提出了一种交错电极结构。研究了光激发和偏置电场对开关特性的影响。通过蒙特卡罗模拟验证了瞬态电流密度和电场分布。实验结果表明，该电极结构可以在1 khz重复频率下稳定地维持雪崩倍增机制。
To explore the stability of gallium arsenide (GaAs) photoconductive semiconductor switches (PCSSs) with avalanche multiplication mechanism, an interdigitated electrode structure is presented at 1-kHz excitation by a femtosecond laser. The influences of optical excitation and bias electric field on switching characteristics are investigated. The transient current density and the distribution of electric field are demonstrated by the Monte Carlo simulation. The repetitive switching indicates that the avalanche multiplication mechanism could persist stably at 1-kHz repetition rate operation with this specific electrode structure.