Effects of Impurity Elements on Isothermal Grain Growth of Electroplated Copper
Effects of Impurity Elements on Isothermal Grain Growth of Electroplated Copper
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DOI：
10.1149/2.0271807jes
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发表时间：
2018-01-01
影响因子：
3.9
通讯作者：
Huang, Q.
中科院分区：
文献类型：
--
作者：
Huang, Q.
研究了单独注入杂质元素的电镀铜薄膜在单独注入杂质元素时的晶粒生长。用方块电阻演化、聚焦离子束成像和X射线衍射仪表征了在不同温度下的晶粒长大。氧、硫和氯的加入阻碍了晶粒的生长，其中氧的影响最弱，氯的影响最强。在400℃以下获得了粗晶的完全相变薄膜。碳的存在导致形核限制了晶粒的生长，完全相变直到700℃才实现。另一方面，氯的存在增强了[111]取向的晶粒生长的择优。本研究旨在为工程化学添加剂改善铜的晶粒结构提供新的视角。(C)作者(S)2018年。由ECS出版。
The grain growth of electroplated copper films implanted with individual impurity elements were studied with elements implanted separately. Sheet resistance evolution, focus ion beam imaging, and X-ray diffraction were used to characterize the grain growth along time at various annealing temperatures. While the incorporation of oxygen, sulfur, and chlorine impedes the grain growth, the oxygen has the weakest impact and chlorine has the strongest. Fully transformed films with coarse grains were obtained at temperatures up to 400 C. The presence of carbon resulted in a nucleation limited grain growth and the full transformation was not achieved until at 700 C. On the other hand, the presence of chlorine enhanced a preference of grain growth in [111] orientation. This study aims to provide a new perspective of improving grain structures of copper with engineered chemical additives. (C) The Author(s) 2018. Published by ECS.