Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers
Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers
复制标题
DOI：
10.1063/5.0046217
复制
发表时间：
2021-06
期刊：
影响因子：
--
通讯作者：
T. Chiba;A. O. Leon;T. Komine
中科院分区：
文献类型：
--
作者：
T. Chiba;A. O. Leon;T. Komine
磁阻尼常数是影响存储器件磁化动力学和磁振子输运效率的重要参数。因此，电场对其的操纵在自旋电子学中是至关重要的。在这里，我们从理论上证明了铁和铁磁绝缘体(FI)/拓扑绝缘体（TI）双层中磁阻尼的电压控制。假设一个类似电容器的设置，我们在FI/TI界面上建立了一个由自旋电荷泵浦引起的有效耗散扭矩，作为施加电压的函数。通过使用真实的材料参数，我们发现在0.25 V的电压下，10nm厚度的FI的有效阻尼可以调谐一个数量级。此外，我们还提供了电压诱导调制磁振子自旋输运的观点。
The magnetic damping constant is a critical parameter for magnetization dynamics and the efficiency of memory devices and magnon transport. Therefore, its manipulation by electric fields is crucial in spintronics. Here, we theoretically demonstrate the voltage-control of magnetic damping in ferroand ferrimagnetic–insulator (FI)/topological–insulator (TI) bilayers. Assuming a capacitor-like setup, we formulate an effective dissipation torque induced by spin-charge pumping at the FI/TI interface as a function of an applied voltage. By using realistic material parameters, we find that the effective damping for a FI with 10 nm thickness can be tuned by one order of magnitude under the voltage with 0.25 V. Also, we provide perspectives on the voltage-induced modulation of the magnon spin transport on proximitycoupled FIs.