Integrating GaAs, Si, and Dye-Sensitized Solar Cells in Multijunction Devices and Probing Harsh Condition Behavior
Integrating GaAs, Si, and Dye-Sensitized Solar Cells in Multijunction Devices and Probing Harsh Condition Behavior
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将 GaAs、Si 和染料敏化太阳能电池集成到多结器件中并探索恶劣条件下的行为
DOI:
10.1021/acsaelm.0c00870
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发表时间:
2021
影响因子:
4.7
通讯作者:
Delcamp, Jared H.
中科院分区:
文献类型:
--
作者:
Cheema, Hammad;Watson, Jonathon;Delcamp, Jared H.
Mechanically stacked single illuminated area sequential series multijunction dye-sensitized solar cells (SSM-DSCs) were fabricated with varying bottom devices including DSC, silicon (Si), and gallium arsenide (GaAs). The use of near-infrared (>750 nm) photons for conversion into electricity is probed for each of the three technologies. The effect of using these photons on multijunction device power conversion efficiencies is investigated with a three-subcell SSM-DSC design where the top and middle subcells were DSC devices withD35andB11sensitizers, respectively. The power conversion efficiencies were found to follow the order:DSC/DSC/GaAs>DSC/DSC/DSC>DSC/DSC/Si. Low-light conditions were examined for the third subcell technologies as independent solar cells to understand the effects of receiving low light intensity as part of a multijunction system. GaAs and DSC as bottom devices both demonstrated a superior response under filtered or reduced illumination to that of Si in these studies. The influence of harsh temperatures on DSC device performance was also examined.