Extended time bias stress effects in polymer transistors
Extended time bias stress effects in polymer transistors
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DOI：
10.1063/1.2398798
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发表时间：
2006-12-01
影响因子：
3.2
通讯作者：
Ong, B.
中科院分区：
文献类型：
--
作者：
Street, R. A.;Chabinyc, M. L.;Ong, B.
描述了聚四噻吩薄膜晶体管的长期偏置应力稳定性。晶体管受到重复脉冲栅极偏置应力长达五个月的时间，阈值电压和迁移率进行监测。样品是保持在清洁干燥空气或干燥氮气中的未封装底栅晶体管。阈值电压偏移在前1-2天随时间按幂律增加，并且偏移的幅度是栅极电压的强函数。在几天之后，对于20-40 V的栅极电压，阈值电压偏移稳定到2-10 V的近似恒定值。当去除应力时，阈值电压以2-4天的时间常数恢复，并且恢复是稳定的起源。栅极偏置应力还在大约十天内引起迁移率降低10%-30%，并且迁移率进一步缓慢变化，这可能与电应力无关。(c)2006年，美国物理学会。
The long term bias stress stability of poly(quaterthiophene) thin film transistors is described. Transistors are subject to repetitive pulsed gate bias stress for periods of up to five months, and the threshold voltage and mobility are monitored. The samples are unencapsulated bottom gate transistors held in either clean dry air or dry nitrogen. The threshold voltage shift increases as a power law with time for the first 1-2 days, and the magnitude of the shift is a strong function of gate voltage. After a few days, threshold voltage shift stabilizes to an approximately constant value of 2-10 V for gate voltages of 20-40 V. When the stress is removed, the threshold voltage recovers with a time constant of 2-4 days, and the recovery is the origin of the stabilization. The gate bias stress also induces a reduction in mobility of 10%-30% over about ten days, and there are further slow changes in mobility, which may be unrelated to electrical stress. (c) 2006 American Institute of Physics.