Interfacial effect on metal/oxide nanowire junctions
Interfacial effect on metal/oxide nanowire junctions
复制标题
DOI：
10.1063/1.3318257
复制
发表时间：
2010-02-15
影响因子：
4
通讯作者：
Kawai, Tomoji
中科院分区：
文献类型：
--
作者：
Nagashima, Kazuki;Yanagida, Takeshi;Kawai, Tomoji
金属/氧化物纳米线结中的界面在电子器件应用中起着至关重要的作用，特别是二端器件。在这里，我们展示了氧化物（SnO 2-delta）纳米线/Pt结的界面效应的关键作用。从结的I-V数据估计的电阻率是四个数量级高于由非接触式微波电导率方法测量。我们发现，这种明显的差异是由于绝缘氧化界面层的存在。由于大多数导电氧化物通常是通过氧空位的n型半导体，因此上述含义对于使用氧化物纳米线的可再生新兴纳米器件将是相当普遍和关键的。(C)2010年美国物理学会。[doi 10.1063/1.3318257]
An interface in metal/oxide nanowire junctions plays a crucial role on the electronic device applications, especially two-terminal devices. Here we demonstrate the crucial role of interfacial effects on oxide (SnO2-delta) nanowire/Pt junctions. The resistivity estimated from the I-V data of the junctions was four orders of magnitudes higher than that measured by a noncontact microwave conductivity method. We found that such apparent discrepancy is due to the presence of insulating oxidized interfacial layer. Since most conductive oxides are typically n-type semiconductors via oxygen vacancies, above implications will be rather universal and crucial for reproducible emerging nanodevices using oxide nanowires. (C) 2010 American Institute of Physics. [doi:10.1063/1.3318257]