Improvement of interfacial properties with interfacial layer in La2O3/Ge structure
Improvement of interfacial properties with interfacial layer in La2O3/Ge structure
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DOI：
10.1016/j.mee.2007.04.107
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发表时间：
2007-09-01
影响因子：
2.3
通讯作者：
Iwai, H.
中科院分区：
文献类型：
--
作者：
Song, J.;Kakushima, K.;Iwai, H.
研究了不同沉积后退火（PDA）条件下La203/Ge结构的电特性和界面性能。我们发现界面氧化层降低了D-it，而氧化物的冗余生长导致了CET的增加。为了满足较小的CET和较低的D-it，假设界面层（IL）的合适厚度为1.0 ~ 1.5 nm。另一方面，Ge亚氧化物在IL中引起滞后性增加。相反，通过引入Ge化学氧化物，在N-2中与PDA在500℃形成界面La-germanate层，可以降低迟滞和D-it。
The electrical characteristics and interfacial properties of La203/Ge structures under various post-deposition annealing (PDA) conditions are studied. We found that the interfacial Ge oxide layer reduced the D-it, while redundant growth of the oxide led to increment of CET. In order to satisfy small CET and low D-it, appropriate interfacial layer (IL) thickness is assumed to be 1.0-1.5 nm. On the other hand, Ge sub-oxide in the IL caused to increase hysteresis. Instead, by introducing the Ge chemical oxide, an interfacial La-germanate layer formed with PDA at 500 degrees C in N-2, which could reduced both the hysteresis and D-it.