Growth of high-quality epitaxial ZnO films on α-Al2O3
Growth of high-quality epitaxial ZnO films on α-Al2O3
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DOI：
10.1016/s0022-0248(98)01427-4
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发表时间：
1999-05-01
影响因子：
1.8
通讯作者：
Matsubara, K
中科院分区：
文献类型：
--
作者：
Fons, P;Iwata, K;Matsubara, K
采用分子束外延技术，利用射频自由基源提供的元素锌和氧，在蓝宝石（0001）衬底上生长了ZnO外延薄膜。尽管ZnO和下面的蓝宝石衬底之间的大的晶格失配，具有类似于12弧秒的（0002）摇摆曲线半宽度的ZnO层已经生长。X-射线倒易晶格扫描沿着[0001]方向显示出强的Pendellosung条纹，表明存在非常平坦的界面和表面，如原子力显微镜实验所证实的。X射线极图测量表明外延层的a轴相对于衬底的a轴旋转30度。初步的光致发光测量表明主要的近带边发射。(C)1999 Elsevier Science B. V.保留所有权利。
ZnO epitaxial thin films have been grown on sapphire(0001) substrates by molecular beam epitaxy using elemental zinc and oxygen supplied by an RF radical source. Despite the large lattice mismatch between ZnO and the underlying sapphire substrate, ZnO layers with (0002) rocking curve half-widths of similar to 12 arcsec have been grown. X-ray reciprocal lattice scans along the [0001] direction show strong Pendellosung fringes indicating the presence of an extremely flat interface and surface as was confirmed by atomic force microscopy experiments. X-ray pole figure measurements indicate that the a-axis of the epilayer was rotated with respect to the a-axis of the substrate by 30 degrees. Preliminary photoluminescence measurements indicate predominant near-bandedge emission. (C) 1999 Elsevier Science B.V. All rights reserved.