Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation
Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation
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DOI:
10.1016/j.jcrysgro.2015.11.041
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发表时间:
2016-02-15
影响因子:
1.8
通讯作者:
Eickhoff, M.
中科院分区:
文献类型:
--
作者:
Kracht, M.;Schoermann, J.;Eickhoff, M.
We report on the growth of cuprous oxide on MgO(001) by plasma-assisted molecular beam epitaxy. An increased copper to oxygen ratio enhances the cube-on-cube growth of the Cu2O crystallites compared to the Cu2O(110)parallel to MgO(100) oriented crystallites. This correlates with the occurrence of a (3 root 2x root 2)R45 degrees surface reconstruction observed during growth. This reconstruction is known to be unstable under oxygen-rich conditions and stabilizes the Cu2O(001) surface compared to the Cu2O(110) surface for higher copper to oxygen ratios enhancing cube-on-cube growth.High resolution X-ray diffraction analysis of the resulting cube-on-cube Cu2O layers indicates partial relaxation by 39.7%. Investigations of the optical absorption and photoluminescence properties of the films reveal excitonic contributions comparable to those of single crystals. (C) 2015 Elsevier B.V. All rights reserved.