Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III–V Single Electron Devices and Quantum Devices
Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III–V Single Electron Devices and Quantum Devices
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用于 III-V 单电子器件和量子器件栅极控制的纳米肖特基接触的电特性
DOI：
10.1143/jjap.40.2021
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发表时间：
2001
影响因子：
1.5
通讯作者：
H. Hasegawa
中科院分区：
文献类型：
--
作者：
Taketomo Sato;S. Kasai;H. Hasegawa
为了理解和改善其在单电子器件和量子器件中的栅控行为，对n-GaAs和n-InP衬底上原位电化学形成的纳米肖特基接触的电学特性进行了实验和理论研究。从使用导电原子力显微镜（AFM）系统的电流-电压（I-V）测量，纳米肖特基接触表现出非线性的log I-V特性与大的和电压依赖的n值，这不能解释的一维电子发射模型。通过一种新的三维电子发射模型解释了这种行为，该模型包括由环境费米能级钉扎修改的三维电势分布。在新模型的基础上，考虑了环境效应，计算了土壤的耗减特性。结果表明，由于环境费米能级钉扎，纳米肖特基接触下的耗尽层宽度随偏压的变化很小。因此，费米能级钉扎的控制对于获得表现出良好行为的量子机制中的纳米器件至关重要。
The electrical properties of nanometer-sized Schottky contacts formed on n-GaAs and n-InP substrates by an in situ electrochemical process were studied both experimentally and theoretically to understand and improve their gate control behavior in single electron devices and quantum devices. From the current–voltage (I–V) measurements using a conductive atomic force microscope (AFM) system, the nano-Schottky contacts showed nonlinear log I–V characteristics with large and voltage-dependent n values which cannot be explained by the 1D thermionic emission model. The behavior was explained by a novel 3D thermionic emission model including 3D potential distribution modified by an environmental Fermi-level pinning. The depletion characteristics were calculated on the basis of the new model including the environmental effects. The results showed small changes of the depletion layer width with a bias underneath the nano-Schottky contacts due to the environmental Fermi-level pinning. Control of Fermi-level pinning is thus crucial to obtain nano devices in the quantum regime that exhibit good behavior.