Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon
Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon
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DOI：
10.1088/1748-0221/16/08/p08002
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发表时间：
2021-04
影响因子：
1.3
通讯作者：
M. Wagenpfeil;T. Ziegler;J. Schneider;A. Fieguth;M. Murra;D. Schulte;L. Althueser;C. Huhmann;C. Weinheimer;T. Michel;G. Anton;G. Adhikari;S. Al Kharusi;E. Angelico;I. Arnquist;I. Badhrees;J. Bane;D. Beck;V. Belov;T. Bhatta;A. Bolotnikov;P. Breur;J. Brodsky;E. Brown;T. Brunner;E. Caden;G. Cao;C. Chambers;B. Chana;S. Charlebois;D. Chernyak;M. Chiu;B. Cleveland;A. Craycraft;T. Daniels;L. Darroch;A. Der Mesrobian-Kabakian;A. De St. Croix;K. Deslandes;R. DeVoe;M. L. di Vacri;M. Dolinski;J. Echevers;M. Elbeltagi;L. Fabris;D. Fairbank;W. Fairbank;J. Farine;S. Ferrara;S. Feyzbakhsh;G. Gallina;P. Gautam;G. Giacomini;C. Gingras;D. Goeldi;A. Gorham;R. Gornea;G. Gratta;E. Hansen;C. Hardy;K. Harouaka;M. Heffner;E. Hoppe;A. House;M. Hughes;A. Iverson;A. Jamil;M. Jewell;A. Karelin;L. Kaufman;R. Krücken;A. Kuchenkov;K.S. Kumar;Y. Lan;A. Larson;K. Leach;D. Leonard;G. Li;S. Li;Z. Li;C. Licciardi;R. Lindsay;R. Maclellan;P. Martel-Dion;N. Massacret;T. McElroy;M. Medina Peregrina;B. Mong;D. Moore;K. Murray;J. Nattress;C. Natzke;R. J. Newby;F. Nolet;O. Nusair;J. Nzobadila Ondze;K. Odgers;A. Odian;J. Orrell;G. S. Ortega;I. Ostrovskiy;C. Overman;S. Parent;A. Piepke;A. Pocar;J. Pratte;E. Raguzin;G. J. Ramonnye;H. Rasiwala;S. Rescia;F. Retière;C. Richard;M. Richman;J. Ringuette;A. Robinson;T. Rossignol;P. Rowson;N. Roy;R. Saldanha;S. Sangiorgio;A. Soma;F. Spadoni;V. Stekhanov;T. Stiegler;M. Tarka;S. Thibado;A. Tidball;J. Todd;T. Totev;S. Triambak;R. Tsang;F. Vachon;V. Veeraraghavan;S. Viel;C. Vivo-Vilches;M. Walent;U. Wichoski;M. Worcester;S.X. Wu;Q. Xia;W. Yan;L. Yang;O. Zeldovich
中科院分区：
文献类型：
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作者：
M. Wagenpfeil;T. Ziegler;J. Schneider;A. Fieguth;M. Murra;D. Schulte;L. Althueser;C. Huhmann;C. Weinheimer;T. Michel;G. Anton;G. Adhikari;S. Al Kharusi;E. Angelico;I. Arnquist;I. Badhrees;J. Bane;D. Beck;V. Belov;T. Bhatta;A. Bolotnikov;P. Breur;J. Brodsky;E. Brown;T. Brunner;E. Caden;G. Cao;C. Chambers;B. Chana;S. Charlebois;D. Chernyak;M. Chiu;B. Cleveland;A. Craycraft;T. Daniels;L. Darroch;A. Der Mesrobian-Kabakian;A. De St. Croix;K. Deslandes;R. DeVoe;M. L. di Vacri;M. Dolinski;J. Echevers;M. Elbeltagi;L. Fabris;D. Fairbank;W. Fairbank;J. Farine;S. Ferrara;S. Feyzbakhsh;G. Gallina;P. Gautam;G. Giacomini;C. Gingras;D. Goeldi;A. Gorham;R. Gornea;G. Gratta;E. Hansen;C. Hardy;K. Harouaka;M. Heffner;E. Hoppe;A. House;M. Hughes;A. Iverson;A. Jamil;M. Jewell;A. Karelin;L. Kaufman;R. Krücken;A. Kuchenkov;K.S. Kumar;Y. Lan;A. Larson;K. Leach;D. Leonard;G. Li;S. Li;Z. Li;C. Licciardi;R. Lindsay;R. Maclellan;P. Martel-Dion;N. Massacret;T. McElroy;M. Medina Peregrina;B. Mong;D. Moore;K. Murray;J. Nattress;C. Natzke;R. J. Newby;F. Nolet;O. Nusair;J. Nzobadila Ondze;K. Odgers;A. Odian;J. Orrell;G. S. Ortega;I. Ostrovskiy;C. Overman;S. Parent;A. Piepke;A. Pocar;J. Pratte;E. Raguzin;G. J. Ramonnye;H. Rasiwala;S. Rescia;F. Retière;C. Richard;M. Richman;J. Ringuette;A. Robinson;T. Rossignol;P. Rowson;N. Roy;R. Saldanha;S. Sangiorgio;A. Soma;F. Spadoni;V. Stekhanov;T. Stiegler;M. Tarka;S. Thibado;A. Tidball;J. Todd;T. Totev;S. Triambak;R. Tsang;F. Vachon;V. Veeraraghavan;S. Viel;C. Vivo-Vilches;M. Walent;U. Wichoski;M. Worcester;S.X. Wu;Q. Xia;W. Yan;L. Yang;O. Zeldovich
硅光电倍增管被认为是一种非常有前途的技术，可用于粒子物理学低本底实验的下一代尖端探测器。本文介绍了硅光电倍增管（SiPM）和其他样品在真空紫外线（VUV）波长的液体氙中的系统反射率研究。使用明斯特大学的专用装置，可以获得浸入液体氙中的各种样品的角分辨反射测量，角分辨率为0.45°。在这项工作中研究了四个样品：一个Hamamatsu VUV 4 SiPM，一个FBK VUV-HD SiPM，一个FBK晶片样品和一个来自EXO-200的大面积雪崩光电二极管（LA-APD）。对于四个样品，在20°入射角下的反射率被确定为25- 36%，并且对于LA-APD和FBK样品，在70°下增加到高达65%。Hamamatsu VUV 4 SiPM显示出随着入射角的增加而下降。反射率结果将被纳入即将到来的nEXO探测器的光响应模拟。
Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25–36 % at an angle of incidence of 20° for the four samples and increases to up to 65 % at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.