Evolving shock-wave profiles measured in a silicon crystal by picosecond time-resolved x-ray diffraction
Evolving shock-wave profiles measured in a silicon crystal by picosecond time-resolved x-ray diffraction
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通过皮秒时间分辨 X 射线衍射测量硅晶体中的演化冲击波分布
DOI：
10.1063/1.1313297
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发表时间：
2000
影响因子：
4
通讯作者：
Masatake Yoshida
中科院分区：
文献类型：
--
作者：
Y. Hironaka;Akio Yazaki;Fumikazu Saito;K. Nakamura;K. Kondo;H. Takenaka;Masatake Yoshida
利用皮秒时间分辨x射线衍射对脉冲激光照射下的单晶硅（脉冲功率为300ps， 1.4 J/cm2）以60ps的间隔进行探测，观察到的摇摆曲线显示了激光照射对硅晶格的冲击压缩。利用动态x射线衍射理论估计了垂直于Si（111）平面的单轴应变分布。剖面的时空演化表明，在硅晶体内部存在以9.4 km/s的速度传播的激波。观测到的最大压缩率为1.05%，对应的压力为2.18 GPa。
Picosecond time-resolved x-ray diffraction is used to probe single-crystal silicon under pulsed-laser irradiation (300 ps pulse at 1.4 J/cm2) at an interval of 60 ps. The observed rocking curves show shock compression of the silicon lattice by the laser irradiation. Uniaxial strain profiles perpendicular to the Si(111) plane are estimated using dynamical x-ray diffraction theory. The temporal and spatial evolution of the profiles indicates a propagating shock wave with the velocity of 9.4 km/s inside the silicon crystal. The observed maximum compression is 1.05%, which corresponds to a pressure of 2.18 GPa.