Process integration of self-assembled polymer templates into silicon nanofabrication

Process integration of self-assembled polymer templates into silicon nanofabrication
复制标题

DOI:
10.1116/1.1521730
复制
发表时间:
2002-11-01
影响因子:
1.4
通讯作者:
Babich, IV
Babich, IV
中科院分区:
工程技术4区
文献类型:
--
作者:
Guarini, KW;Black, CT;Babich, IV

文献摘要

被引文献

相似文献

自组装的二嵌段共聚物薄膜被用作牺牲层,用于将致密的纳米级图案转移到更坚固的材料中。我们详细介绍了用于实现高度均匀的纳米多孔电介质薄膜,高纵横比纳米织构硅,氮化硅点阵列,硅柱阵列,硅尖阵列的过程。所有技术都与标准半导体制造工艺兼容。我们还讨论了每个所得的压力级结构的可能应用,包括电容器和生物芯片的高表面积基板,非易失性存储器的量子点阵列,和垂直晶体管或场发射显示器的硅柱阵列。(C)2002年美国真空学会。
Self-assembled diblock copolymer thin films are used as sacrificial layers for the transfer of dense nanoscale patterns into more robust materials. We detail the processes used to achieve highly uniform nanoporous dielectric films, high-aspect-ratio nanotextured silicon, silicon nitride dot arrays, silicon pillar arrays, and silicon tip arrays. All techniques are compatible with standard semiconductor fabrication processes. We also discuss the possible applications of each resulting manometer-scale structure, including high surface area substrates for capacitors and biochips, quantum dot arrays for nonvolatile memories, and silicon pillar arrays for vertical transistors or field-emission displays. (C) 2002 American Vacuum Society.