Interactions of Hydrogen Atoms with Acceptor-Dioxygen Complexes in Czochralski-Grown Silicon
Interactions of Hydrogen Atoms with Acceptor-Dioxygen Complexes in Czochralski-Grown Silicon
复制标题
直拉生长硅中氢原子与受主双氧配合物的相互作用
DOI：
10.1002/pssa.202200176
复制
发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Abdul Fattah T
中科院分区：
文献类型：
--
作者：
Abdul Fattah T
在硅光伏界，氢的存在是否对永久抑制（“再生”）硼氧（BO）缺陷的复合活性至关重要存在争议，BO缺陷是由掺B的富氧硅生产的太阳能电池光致退化（LID）的原因。BO-LID缺陷已被确定为具有负-U特性的BsO 2复合物。这项研究的重点是氢与BsO 2缺陷的相互作用，以阐明BO-LID再生机制。利用结光谱技术，对在直拉法生长的掺B的Si衬底上制作的二极管中BsO 2施主态的浓度变化进行了监测，并对其进行了氢化和后续热处理.研究发现，在398-448 K温度范围内对氢化Cz-Si：B二极管施加反向偏压（RBA）后，BsO 2缺陷几乎完全消失.有人认为，电中性的BsO 2-H配合物已形成后，RBA处理。根据从头计算，H+与BsO 2 −的结合能比H+与Bs−的结合能高出至少0.1 eV，并且所产生的BsO 2-H复合物是电惰性的。
It is debated in the silicon PV community whether or not the presence of hydrogen is essential for the permanent suppression (“regeneration”) of the recombination activity of the boron–oxygen (BO) defect, which is responsible for light‐induced degradation (LID) of solar cells produced from B‐doped oxygen‐rich silicon. The BO‐LID defect has been identified as a BsO2complex which has negative‐Uproperties. This study focuses on the interactions of hydrogen with the BsO2defect to elucidate the BO‐LID regeneration mechanism. With the use of junction spectroscopy techniques, the changes in concentration of the BsO2donor state in diodes which are fabricated on Czochralski‐grown (Cz) B‐doped Si and subjected to hydrogenation and subsequent heat treatments have been monitored. It is found that annealing of the hydrogenated Cz‐Si:B diodes in the temperature range 398–448 K under the application of reverse bias (RBA) results in nearly total disappearance of the BsO2defect. It is argued that electrically neutral BsO2–H complexes have been formed upon the RBA treatments. According to ab initio calculations, the binding energy of H+to BsO2−exceeds that of H+to Bs−by at least 0.1 eV, and the resulting BsO2–H complexes are electrically inactive.