Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing
Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing
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用于红外传感的低噪声高响应度 InAs 电子雪崩光电二极管
DOI：
10.1002/pssc.201100277
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Ker P
中科院分区：
文献类型：
--
作者：
Ker P
在77 ~ 290 K温度范围内对SU-8钝化的InAs雪崩光电二极管（APD）进行了暗电流测量。体相和表面成分的提取表明，InAs APD表现出扩散主导的体电流和产生-复合表面电流。体相和表面相的活化能分别为0.36 eV和0.18 eV。InAs APD的响应率在1.3至2 μm之间的波长下测量，量子效率在测量波长范围内计算为50%。根据测得的暗电流密度和响应度计算了InAs二极管的探测率。结果表明，在200至290 K的温度下，InAs APD具有与商业Judson InAs光电二极管相当的探测率，但在77 K下具有比商业Hamamatsu InAs光电二极管高约10倍的探测率。在77 K下，InAs APD具有高的响应度和低的暗电流密度，显示出其红外传感的潜力。获得了22的雪崩倍增因子，其中在1010 - 4A/cm 2的暗电流密度下具有最小的过量噪声因子，相当于105 × 10 - 6A/cm 2的增益归一化暗电流（© 2012 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）。
Dark current measurements on SU‐8 passivated InAs avalanche photodiodes (APDs) were carried out at temperatures ranging from 77 to 290 K. Extraction of the bulk and surface components suggested that the InAs APDs exhibit diffusion dominated bulk current and generation‐recombination surface current. The activation energies obtained were 0.36 eV and 0.18 eV for bulk and surface components respectively. The responsivities of the InAs APDs were measured for wavelengths between 1.3 to 2 µm and the quantum efficiency was calculated to be ∼50% across the measured wavelengths. The detectivity of the InAs diode was calculated based on the measured dark current density and responsivity. It was shown that the InAs APD has comparable detectivity with a commercial Judson InAs photodiode at temperatures of 200 to 290 K but has approximately 10 times higher detectivity than a commercial Hamamatsu InAs photodiode at 77 K. The potential of InAs APDs for infrared sensing is shown yielding high responsivity values and low dark current densities at 77 K. An avalanche multiplication factor of 22 with minimal excess noise factor at a dark current density of ∼10‐4A/cm2, equivalent to a gain normalized dark current of ∼5 x 10‐6A/cm2is obtained (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)